Analog Devices Silicon SPDT Switch Delivers Fast Settling Time for Demanding Test and Measurement Applications
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The HMC1118LP3DE also offers industry-leading RF power handling of 4 W in through and 0.5 W in hot-switching operating modes. Hot-switching power handling is more than two times better than competitive parts with similar RF bandwidth, which allows engineers to increase allowed RF power in their applications and systems without the risk of damage to the part. The HMC1118LP3DE is optimized for high-isolation and extremely flat transfer characteristics within a wide operating frequency range up to 13 GHz, while maintaining high signal fidelity down to 9 kHz. The combination of features suits the switch for demanding test and measurement, automated test equipment, defense electronics, and wireless communication applications as a lower cost alternative to legacy GaAs switches.
- View product page and download data sheet: http://www.analog.com/hmc1118
- Connect with engineers and ADI product experts on EngineerZone®, an online technical support community: https://ez.analog.com/community/hittite-microwave-and-analog-devices-support-collaboration-group
HMC1118LP3DE SPDT Switch Key Features
- Non-reflective 50-ohm design
- Positive control : 0/+3.3 V
- Low insertion loss: 0.68 dB at 8 GHz
- High isolation: 50 dB at 8 GHz
- Low-cut off frequency of 9 KHz
- Fast settling time of 7.5 usec for 0.05-dB of final RF output level
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Industry-leading high-power handling:
- 35.5-dBm through path
- 27-dBm terminated path and hot-switching case
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High linearity:
- P1dB: +37 dBm typical
- IIP3: +61 dBm typical
- ESD rating: 2-KV HBM
Pricing and Availability
Product |
Price Each per |
Packaging | ||||
HMC1118LP3DE |
|
3-mm × 3-mm
|
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beth.desjardins@analog.com
or
Porter
Novelli
andrew.maclellan@porternovelli.com
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